Abstract

As optoelectronic devices begin to be fabricated with structural features of dimensions comparable to or less than an optical wavelength, their response to light can be expected to differ significantly from predictions based on geometrical optics. Submicronmeter-period (Λ) metal-semiconductor-metal photodetectors (MSM-PDs) represent one example of this type of device that is now reaching commercial usage.^1-4 It was only recently, however, that the anisotropy of MSM-PD responsivity was demonstrated and was explained in terms of the effective transmission of the MSM electrode structure for different light polarizations.^1,2 Here we report the influence of light polarization and intensity on the temporal response for MSM-PDs fabricated on GaAs.

© 1995 Optical Society of America