Monolithically integrated coplanar stripline and InAlAs/InGaAs MODFETs with a 4.2-ps switching time and a 3.2-ps delay

A. Zeng; M. K. Jackson; M. Van Hove; M. Van Hove; W. De Raedt; W. De Raedt

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1995),
paper CThR5

Monolithically integrated coplanar stripline and InAlAs/InGaAs MODFETs with a 4.2-ps switching time and a 3.2-ps delay

A. Zeng, M. K. Jackson, M. Van Hove, and W. De Raedt

Conference on Lasers and Electro-Optics 1995

Baltimore, Maryland United States
21–26 May 1995
ISBN: 1-55752-400-9

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Ultra-High Speed Optoelectronics (CThR)

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A. Zeng, M. K. Jackson, M. Van Hove, and W. De Raedt, "Monolithically integrated coplanar stripline and InAlAs/InGaAs MODFETs with a 4.2-ps switching time and a 3.2-ps delay," in Conference on Lasers and Electro-Optics, T. Deutsch, J. Goldsmith, D. Killinger, and G. Valley, eds., Vol. 15 of OSA Technical Digest (Optica Publishing Group, 1995), paper CThR5.

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Abstract

Electro-optic and photoconductive sampling have been used in characterization of high-speed electronic devices such as the modulation-doped field-effect transistor (MODFET). In previous work, the devices under test were wire bonded to photoconductive-switch/transmission-line fixtures. To avoid parasitics introduced by bond wires, it is desirable to monolithically integrate the device under test with the fixture. In this paper we report electro-optic measurement of a high-speed MODFET monolithically integrated with a photoconductive switch and coplanar stripline fixture.

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