Abstract

Lasers emitting at 980 nm have received a great deal of attention as pumping sources for Er-doped fiber amplifiers (EDFAs). This application requires high reliability at high-power operation of over 100 mW/ facet. In general, 980-nm lasers fabricated on GaAs substrates suffer from catastrophic optical-mirror damage (COMD) at such high power levels. We have, therefore, introduced non-absorbing-mirror (NAM) structures into InGaAs-GaAs-InGaP buried-heterostructure (BH) lasers, resulting in a high maximum output power P_mas of over 180 mW without COMD and with a very low threshold of 3.0 mA.

© 1995 Optical Society of America