Abstract
A semiconductor laser grown on an InP substrate is limited to a maximum wavelength of 2 µm. The availability of a ternary InAsP substrate with a lattice parameter larger than that of InP permits the maximum wavelength to be increased. We have demonstrated a strained InGaAs multipllex-quantum-well laser grown on an InAs0.08P0.92 ternary substrate. The InAsP wafers were characterized by using room-temperature photoluminescence, x-ray diffraction, and x-ray topography. Pulsed power levels of 60 mW/facet at λ = 1.75 µm were measured at T = 250 K. A characteristic temperature of T0 = 46 K was observed over a temperature range of 78 K to 250K
© 1995 Optical Society of America
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