Abstract
SiO2 is known to induce outdiffusion of Ga and generate vacancies in GaAs/ AlGaAs material during annealing. These vacancies, generated on the group-III sublattice, can be used to promote the diffusion of A1 into a buried quantum well. (QW) and the diffusion of Ga into the barriers, and hence they can shift the QW band gap to higher energy by partially intermixing the QWs. This intermixing technique is known as impurity-free vacancy diffusion (IFVD).
© 1995 Optical Society of America
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