Abstract

Long-wavelength surface normal optoelectronic devices such as vertical-cavity lasers, resonant cavity photodetectors and Fabry-Perot modulators are potentially integrable low-cost elements for wafer-level optical communication systems. To achieve high reflectivity, low thermal resistance mirrors with InGaAsP active layers we have proposed¹ to fabricate long-wavelength vertical-cavity lasers (VCLs) using AlAs/GaAs mirrors and InGaAsP active layers bonded by wafer-fusion.² In the method of wafer fusion, substrates of vastly different lattice constants are bonded to produce an optically transparent junction that is both electrically and thermally conductive. Wafer fusion, hence, opens great possibilities for realization of novel optoelectronic devices that utilize InGaAsP, GaAlAs and Si materials in a single structure. We have demonstrated the use of wafer fusion to fabricate single-fused 1.3 µm VCLs,¹ 1.52 µm VCLs,³ resonant-cavity photodetectors,⁴ and double-fused 1.52 µm VCLs.⁵

© 1995 Optical Society of America