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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CWF64

Photoluminescence study on AlxGa1xAs with Zn:Se codopants

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Abstract

AlxGa1xAs is commonly used in a variety of device structures for electronic and optoelectronic device applications.1,2 For some device applications, AlxGa1xAs must have a very low deep-level density and a high luminescence efficiency. However the growth of high-purity AlxGa1xAs epitaxial layers is not easy. It has been shown that AlxGa1xAs is very sensitive to impurities, such as moisture, oxygen, Si, and Ge, in the source materials and the growth apparatus. In this study, we have developed a simple, yet effective, method to produce high purity Zn-doped AlxGa1xAs.

© 1995 Optical Society of America

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