Abstract
AlxGa1−xAs is commonly used in a variety of device structures for electronic and optoelectronic device applications.1,2 For some device applications, AlxGa1−xAs must have a very low deep-level density and a high luminescence efficiency. However the growth of high-purity AlxGa1−xAs epitaxial layers is not easy. It has been shown that AlxGa1−xAs is very sensitive to impurities, such as moisture, oxygen, Si, and Ge, in the source materials and the growth apparatus. In this study, we have developed a simple, yet effective, method to produce high purity Zn-doped AlxGa1−xAs.
© 1995 Optical Society of America
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