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Conferences > CLEO > 1995 > CWF > CWF66
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CWF66

AlAs/InGaAs/AlAs quantum wells on a GaAs substrate for a near-infrared intersubband transition

Susumu Noda, Takashi Asano, and Akio Sasaki

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Abstract

An AlAs/InGaAs/AlAs quantum-well (QW) structure is very promising for a short-wavelength intersubband transition (ISBT) since the band offset at the Γ valley can be very large (about 1.3 eV). The ISBT in QWs is currently drawing much attention because of its unique characteristics as compared with the conventional interband transition. Novel nonlinear optical modulators,1 detectors,2 and laser diodes3 are being developed with this ISBT. Since the typical ISBT wavelength is longer than 4 μm, the important issue for this ISBT is how short the wavelength becomes, and a material that has a large band offset is badly needed.

© 1995 Optical Society of America

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