Carrier recombination in GaInSb/InAs mid-IR lasers

Alan Kost; Linda West; T. C. Hasenberg; D. H. Chow

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1995),
paper JWE4

Carrier recombination in GaInSb/InAs mid-IR lasers

Alan Kost, Linda West, T. C. Hasenberg, and D. H. Chow

Conference on Lasers and Electro-Optics 1995

Baltimore, Maryland United States
21–26 May 1995
ISBN: 1-55752-400-9

From the session
Joint Session on Far-Infrared Sources 2 (JWE)

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A. Kost, L. West, T. C. Hasenberg, and D. H. Chow, "Carrier recombination in GaInSb/InAs mid-IR lasers," in Conference on Lasers and Electro-Optics, T. Deutsch, J. Goldsmith, D. Killinger, and G. Valley, eds., Vol. 15 of OSA Technical Digest (Optica Publishing Group, 1995), paper JWE4.

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Abstract

We use an excitation-correlation technique to measure carrier decay for GaInSb /InAs type-II superlattices. Numerical calculations are used to derive recombination rates.

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