Abstract
The first barrier reservoir and quantum well electron transfer device was a modulator based on absorption bleaching in a quantum well.1 The exchange of electrons between the reservoir and quantum well requires an external applied voltage. A large band-gap semiconductor containing a p-doped layer acts as a barrier for the electron current. Previous effort was focused on the InGaAs/InGaAlAs InP lattice-matched system with a conduction to valance band-gap offset of 65:35.2 Presently there is interest in transposing a BRAQWET structure to the InGaAsP/InP material system for monolithic integration with Al-free lasers. The small band- gap offset of this system (40:60) tends to lead to excessively high current densities with in the structure.3 However, using an n-doped layer as the first layer in the barrier increases the barrier energy resulting in a decrease in a reduction of current density of more than five orders of magnitude.4 But, the relatively low quantum well potential in such structures does not sufficiently confine the electron-wave function.
© 1996 Optical Society of America
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