Abstract

We present the first reliability studies of InGaAs P-I-N photodiodes wafer-bonded to GaAs substrates. The P-I-N photodiodes used for our reliability studies have shown record low dark currents (< 100 pA for about 40% of the devices) and a high responsivity of 1 A/W at 1.55-μm wavelength. The detailed characteristics of the P-I-N detectors wafer-bonded to both GaAs and Si have been published elsewhere.¹ The focus of this paper will be on the degradation of the devices under high temperature operation (60°C) and thermal cycling (23 to 95°C).

© 1996 Optical Society of America