Intensity dependence of the transparency current in InGaAsP semiconductor optical amplifiers

G. T. Kennedy; P. D. Roberts; W. Sibbett; D. A. O. Davies; D. A. O. Davies; M. A. Fisher; M. A. Fisher; M. J. Adams; M. J. Adams

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1996),
paper CMB6

Intensity dependence of the transparency current in InGaAsP semiconductor optical amplifiers

G. T. Kennedy, P. D. Roberts, W. Sibbett, D. A. O. Davies, M. A. Fisher, and M. J. Adams

Conference on Lasers and Electro-Optics 1996

Anaheim, California United States
2–7 June 1996
ISBN: 1-55752-443-2

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Ultrafast All-Optical Switching in Semiconductors (CMB)

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G. T. Kennedy, P. D. Roberts, W. Sibbett, D. A. O. Davies, M. A. Fisher, and M. J. Adams, "Intensity dependence of the transparency current in InGaAsP semiconductor optical amplifiers," in Conference on Lasers and Electro-Optics, J. Bowers, D. Miller, D. Scifres, and A. Weiner, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1996), paper CMB6.

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Abstract

Recently there has been considerable interest in ultrafast gain and refractive index nonlinearities in InGaAsP semiconductor amplifiers at wavelengths around 1.5 μm.^1–3 In particular, when an amplifier is biased at transparency such that a pulse propagating through it experiences no net gain or absorption, a large nonlinearity of |n₂| ≈ 2 × 10⁻¹¹ cm ²W⁻¹ having a recovery time of a few picoseconds has been measured.² Several all-optical switching devices have been demonstrated using this nonlinearity.^4,5

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