Abstract
Earlier, we reported the performance improvement of separate-confinement-heterostructure (SCH) single quantum well (SQW) AlGaAs/GaAs [1,2] and SCH-MQW AlGaAsSb/InGaAsSb [3] diode lasers achieved by broadening the waveguide layers. In long-cavity lasers with broadened waveguides, the decrease of the laser mode fractions propagating in the highly doped cladding layers leads to higher differential efficiencies and higher output powers.
© 1996 Optical Society of America
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