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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThK15

Integrated 200 Mbit/s(non Italiv) Receiver: silicon CMOS transimpedance amplifier with a thin-film InCaAs photodetector

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Abstract

Standard digital CMOS technology is attractive for analog photoreceiver design because it is lower in cost than biCMOS or bipolar circuitry, and can be integrated with digital circuitry on the same chip.1 However, in digital CMOS, poor device matching reduces achievable gain and the lack of passive devices limits design flexibility and accuracy. Despite these drawbacks, digital CMOS can be used for analog receiver designs if the packaging parasitics can be sufficiently reduced. Using direct bonding of a thin-film detector to a CMOS circuit, high-performance receivers can be realized in low-cost, standard foundry CMOS. In this paper, we report for the first time, to our knowledge, the operation of a digital CMOS optical receiver integrated with a high-efficiency thin-film inverted metal-semiconductor-metal (I-MSM), which operates at 200 Mbit/s at λ = 1300 run.

© 1996 Optical Society of America

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