Abstract
Interdiffusion is known to be a process for obtaining lasers with different emission wavelengths on the same wafer. The diffusion length is the product of the interdiffusion coefficient and the annealing time, and is used as a measure of the intermixing or disordering of the quantum well. In a recent paper1 we have studied the valence band structure of impurity-free interdiffused quantum wells, showing the important variation of the hole effective mass.
© 1996 Optical Society of America
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