Abstract
GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. The high quantum efficiency of the LED produced by Nichia Chemical Ind. with an InGaN active layer1 draws a special interest on that alloy. We have measured the stimulated emission for different InGaN samples and compared the determined threshold with those for GaN and AlGaN samples.
© 1996 Optical Society of America
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