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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThP2

Comparative study of stimulated emission in GaN, AlxGa1−xN, and InxGa1−xN

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Abstract

GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. The high quantum efficiency of the LED produced by Nichia Chemical Ind. with an InGaN active layer1 draws a special interest on that alloy. We have measured the stimulated emission for different InGaN samples and compared the determined threshold with those for GaN and AlGaN samples.

© 1996 Optical Society of America

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