Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1996 > CThU > CThU1
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThU1

Absolute internal quantum efficiency of an InGaN/GaN quantum well

Charles Reese, Eli Yablonovitch, Stacia Keller, B. Keller, and Steven DenBaars

Not Accessible

Your library or personal account may give you access

Abstract

Gallium Nitride materials and alloys are fast becoming important semiconductors as blue and UV light-emitters due to their wide band-gaps. Applications for highly efficient blue LEDs and UV lasers include large full-color flat panel displays and high-density optical data storage.1 We report what we believe to be the first measurement of the absolute internal luminescence quantum efficiency of an InGaN/GaN single quantum well.

© 1996 Optical Society of America

PDF Article
More Like This
Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells

Koichi Okamoto, Isamu Niki, Alexander Shvartser, Yukio Narukawa, Takashi Mukai, and Axel Scherer
CWA28 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

High Internal Quantum Efficiency from AlGaN-delta-GaN Quantum Well at 260 nm

Cheng Liu, Kevin Lee, Galen Harden, Anthony Hoffman, Huili (Grace) Xing, Debdeep Jena, and Jing Zhang
AF1I.2 CLEO: Applications and Technology (CLEO:A&T) 2020

Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Quoc-Hung Pham, Farn-Shiun Hwu, Huy-Bich Nguyen, and Jyh-Chen Chen
DM2D.2 Solid-State and Organic Lighting (SOLED) 2015

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use