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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThU3

Electronic and structural properties of the selectively wet-oxidized AlAs-GaAs interface

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Abstract

Vertical-cavity laser thresholds have recently been greatly reduced by replacing proton implantation with selective "wet oxidation" of the AlAs layers.1 The oxide provides lateral confinement of both the electrical current and the optical mode. Record-low threshold currents below 10 μA at room temperature have been reported,2 which are far lower than those reported for implanted lasers.3

© 1996 Optical Society of America

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