Abstract

This paper reports micro-Raman scattering investigations on GaInP/AlGaInP, GaAs/AlGaAs, and stained InGaAs/AlGaAs single quantum well (SQW) graded-index separate-confinement heterostructure ridge lasers. It demonstrates the potential and usefulness of Raman spectroscopy for optimizing the performance and reliability of laser diodes by measuring (i) local mirror temperatures, (ii) mechanical stress fields, (iii) mirror lattice disorder, and (iv) mirror coating stability under laser operation. Raman spectra have been measured in the backscattering geometry on the (110) facets of the 5-μm-wide lasers by using the 457.9nm Ar⁺ laser line with low powers of ≃ mW focused on a 1-μm spot size. In this geometry only the transversal-optical (TO) phonon modes are allowed.

© 1996 Optical Society of America