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Conferences > CLEO > 1996 > CTuL > CTuL19
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuL19

Effect of rapid thermal annealing on carrier lifetime in arsenic-ion-implanted GaAs

Ci-Ling Pan, Gong-Ru Lin, Wen-Chung Chen, Feruz Ganikhanov, and C.-S. Chang

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Abstract

LT-GaAs, with subpicosecond photoexcited carrier lifetime, is currently the premier material for fabricating ultrafast optoelectronic devices.1 An alternate arsenic-rich material, arsenic-ion-implanted (As+—implanted) GaAs, or GaAs:As+ has recently emerged.2 The structural and electrical characteristics of GaAs:As+ and LT-GaAs are very similar.

© 1996 Optical Society of America

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