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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuT2

Development of 2.2-μm InGaAs photodetectors using molecular beam epitaxy

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Abstract

Operation of photodetectors in the near-infrared (1.0-3.0 μm) has become increasingly important for a variety of applications including process control, spectroscopy, and eye-safe lidar. Significant improvements in the performance of these systems can be obtained by integrating these photodetectors in large scale linear and 2-D focal plane arrays (FPAs).

© 1996 Optical Society of America

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