Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition

H. Q. Hon; H. C. Chui; K. D. Choquette; B. E. Mammons; W. G. Brieland; K. M. Geib

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1996),
paper CWF35

Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition

H. Q. Hon, H. C. Chui, K. D. Choquette, B. E. Mammons, W. G. Brieland, and K. M. Geib

Conference on Lasers and Electro-Optics 1996

Anaheim, California United States
2–7 June 1996
ISBN: 1-55752-443-2

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H. Q. Hon, H. C. Chui, K. D. Choquette, B. E. Mammons, W. G. Brieland, and K. M. Geib, "Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition," in Conference on Lasers and Electro-Optics, J. Bowers, D. Miller, D. Scifres, and A. Weiner, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1996), paper CWF35.

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Abstract

Metalorganic chemical vapor deposition (MOCVD) technology is increasingly recognized as a superior platform for growth of vertical-cavity surface-emitting lasers (VCSELs) because of its high throughput, low surface defect density, continuous compositional grading control, and the flexibility for materials and dopant choices. In this paper, we show that it is also capable of extremely high wafer uniformity and run-to-run reproducibility.

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