Abstract

GaInP/AlGaInP is a very promising material for optoelectronic components for the visible spectral range down to 630 nm. Depending on the growth parameter MOVPE-grown (Al)GaInP alloys (lattice-, matched to GaAs substrate) show a selfordering in form of a GaP/InP superlattice along the [111] directions. This implies significant changes of the band structure and the optical and electrical properties. We have studied the polarization dependence of the electroabsorption (Franz-Keldysh effect) in AlGaInP/ GaInP p-i-n double-hetero structures. By a simultaneous evaluation of transmission and photocurrent measurements the absorption spectra and the field-induced absorption changes of ordered grown, thermally disordered (900°C for 30 s), and disordered grown (Al)GalnP alloys have been determined. For disordered grown and thermally disordered material no polarization dependence of the electroabsorption could be observed. In contrast, the ordered material shows a strong polarization dependence of the field-induced absorption changes.

© 1996 Optical Society of America