Abstract
We have previously reported tapered lasers at 1.3 µm with cw output powers of 0.5 W of which nearly 80% was in the central lobe of a nearly diffraction-limited far field.1 Here we report laser and amplifier results on devices fabricated using improved processing techniques and a new device design. The new device incorporates a ridge waveguide section with the tapered gain region as illustrated in Fig. 1 and is similar to that reported earlier for 980-nm tapered lasers2 and amplifiers.3
© 1996 Optical Society of America
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