Dependence of nonlinear absorption in CdGeAs2 on temperature, orientation, and charge carrier density

Shekhar Guha; Melvin C. Ohmer; Patrick J. Hood; Peter G. Schunemann; Peter G. Schunemann

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CFG2

Dependence of nonlinear absorption in CdGeAs₂ on temperature, orientation, and charge carrier density

Shekhar Guha, Melvin C. Ohmer, Patrick J. Hood, and Peter G. Schunemann

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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Nonlinear Measurements for Material Characterization (CFG)

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S. Guha, M. C. Ohmer, P. J. Hood, and P. G. Schunemann, "Dependence of nonlinear absorption in CdGeAs2 on temperature, orientation, and charge carrier density," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CFG2.

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Abstract

CdGeAs₂ is an attractive candidate for midwave infrared generation because of its high nonlinear optical coefficient and favorable thermal figure of merit.

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