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Conferences > CLEO > 1997 > CFG > CFG4
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CFG4

In situ optical second harmonic monitoring of hydrogen adsorption and desorption kinetics during epitaxial growth on Si (001)

X. F. Hu, Z. Xu, P. S. Parkinson, D. Lim, J. G. Ekerdt, and M. C. Downer

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Abstract

Surface hydrogen plays a beneficial role in achieving high quality epitaxial Si films by low temperature (T < 900 K), low pressure (P < 1 mtorr) chemical vapor deposition (CVD) processes because it reduces the reaction efficiency of oxygen and water with Si surfaces to below 10−12 and ensures atomically abrupt layer-by layer (2D) growth.

© 1997 Optical Society of America

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