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Conferences > CLEO > 1997 > CPD > CPD14
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CPD14

5.2 μm Lasing from a GaImSb/InAs Strain-Balanced Broken Gap Superlattice Semiconductor Laser Under Pulsed Optical Excitation

D. L. McDaniel, Chi Yan, T.C. Hasenberg, M.E. Flatté, and J.T. Olesberg

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Abstract

We report the first lasing of a GaSb-based semiconductor laser at a wavelength beyond 5 μm. The maximum lasing wavelength under pulsed optical excitation was 5.2 μm at 185 K.

© 1997 Optical Society of America

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