An all-epitaxial vertical-cavity bistable device at 1.55 μm

J-Ph. Debray; E. Lugagne-Delpon; G. Le Roux; M. Quillec

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CThX2

An all-epitaxial vertical-cavity bistable device at 1.55 μm

J-Ph. Debray, E. Lugagne-Delpon, G. Le Roux, and M. Quillec

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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Integrated Devices and Optical Materials (CThX)

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J. Debray, E. Lugagne-Delpon, G. Le Roux, and M. Quillec, "An all-epitaxial vertical-cavity bistable device at 1.55 μm," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CThX2.

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Abstract

Vertical cavity bistable devices are very attractive because they can be addressed vertically, hence allowing high density processing.

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