Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1997 > CTuO > CTuO3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CTuO3

Characterization and modeling of electroluminescence from single-quantum-well InGaN/AIGaN/GaN green-light-emitting diodes

Petr G. Eliseev, Piotr Perlin, Julien Furioli, and Marek Osiński

Not Accessible

Your library or personal account may give you access

Abstract

Gallium nitride as well as its alloys with indium and aluminum nitride represent the most important materials for UV emitters and detectors.

© 1997 Optical Society of America

PDF Article
More Like This
Gain spectroscopy in InGaN/GaN quantum well diodes

M. Kuball, E.-S. Jeon, Y.-K. Song, A. V. Nurmikko, P. Kozody, A. Abare, S. Keller, L. A. Coldren, U. K. Mishra, S. P. DenBaars, and D. A. Steigerwald
CThF6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997

Differential Carrier Lifetimes and Efficiency of InGaN/ GaN Quantum Well and Quantum Dot Light Emitting Diodes

Animesh Banerjee, Meng Zhang, and Pallab Bhattacharya
CMU3 CLEO: Science and Innovations (CLEO:S&I) 2011

Absolute internal quantum efficiency of an InGaN/GaN quantum well

Charles Reese, Eli Yablonovitch, Stacia Keller, B. Keller, and Steven DenBaars
CThU1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use