Temperature dependence of electron mobility in Bi12GeO20 and Bi12SiO20 with use of the time-off light technique

D. Bloom; S. W. S. McKeever

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CTuP1

Temperature dependence of electron mobility in Bi₁₂GeO₂₀ and Bi₁₂SiO₂₀ with use of the time-off light technique

D. Bloom and S. W. S. McKeever

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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CLEO Poster Session: 1 (CTuP)

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D. Bloom and S. W. S. McKeever, "Temperature dependence of electron mobility in Bi12GeO20 and Bi12SiO20 with use of the time-off light technique," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CTuP1.

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Abstract

The sillenites are technologically important materials because of their photorefractive properties.

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