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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CTuP27

Ultrafast furnace-annealed arsenic-ion-implanted GaAs photoconductors

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Abstract

Arsenic-ion-implanted GaAs (GaAs:As+),1 with excess arsenic-related defects, has recently emerged as a potential alternative to low-temperature molecular-beam-epitaxially (LTMBE) grown GaAs for ultrafast optoelectronic applications.

© 1997 Optical Society of America

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