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Conferences > CLEO > 1997 > CTuQ > CTuQ4
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CTuQ4

Effect of p-doping on carrier leakage and characteristic temperature To of 1.3 μm strained InGaAsP/InP multiple quantum well lasers

D. V. Donetsky, G. L. Belenky, C. L. Reynolds, R. F. Kazarinov, and S. Luryi

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Abstract

In Ref. 1 leakage current of electrons from the active region of InGaAsP/InP multiple quantum well (MQW) was measured with use of a purely electrical technique within the current density range 0-2 kA/cm2 in cw regime.

© 1997 Optical Society of America

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