Strain and spontaneous ordering of bulk In1−xGaxAsyP1−y on (001) n-InP wafers

A. Jaeger; G. Weiser

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CWF35

Strain and spontaneous ordering of bulk In_1−xGa_xAs_yP_1−y on (001) n-InP wafers

A. Jaeger and G. Weiser

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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CLEO Poster Session: 2 (CWF)

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A. Jaeger and G. Weiser, "Strain and spontaneous ordering of bulk In1−xGaxAsyP1−y on (001) n-InP wafers," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CWF35.

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Abstract

The gap of InGaAsP can be varied over a wide range in the near IR. Spontaneous CuPt ordering has been found to reduce the gap and to split the valence band.

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