Electro-optic study of the bandstructure of InGaAs laser material

A. Jaeger; G. Weiser

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CWF45

Electro-optic study of the bandstructure of InGaAs laser material

A. Jaeger and G. Weiser

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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CLEO Poster Session: 2 (CWF)

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A. Jaeger and G. Weiser, "Electro-optic study of the bandstructure of InGaAs laser material," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CWF45.

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Abstract

Modeling of semiconductor laser operation requires detailed knowledge about the density of states, i.e., the bandstructure of the lasing material.¹

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