Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1997 > CWF > CWF56
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CWF56

Near-planar monolithic integration of GaAs FETs and LEDs with use of a thermal oxide isolation (TOI) layer

C. B. Wheeler, S. Daryanani, and Y. H. Zhang

Not Accessible

Your library or personal account may give you access

Abstract

Monolithic integration of GaAs FETs and vertical-cavity surface-emitting lasers (VCSELs)/ photodetectors on the same chip is difficult in part because the current flow through a FFT is in the plane of the wafer but must be directed perpendicularly through a vertical p-n junction device.

© 1997 Optical Society of America

PDF Article
More Like This
Integrated VCSELs, MSM Photodetectors, and GaAs MESFETs for Low Cost Optical Interconnects

Yue Liu, Mary Hibbs-Brenner, Bob Morgan, Jim Nohava, Bob Walterson, Terry Marta, Sommy Bounnak, Edith Kalweit, John Lehman, Doug Carlson, and Peg Wilson
SMB.3 Spatial Light Modulators (SLM) 1997

Oxide-apertured VCSELs with use of oxide/GaAs distributed Bragg reflectors and tunnel injection

D. L. Huffaker, T.-H. Oh, and D. G. Deppe
CWA5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997

A novel simple oxide isolation process to fabricate high performance VCSEL arrays

G. Giaretta, W. Yuen, L. Aronson, B. Lemoff, and C. J. Chang-Hasnain
CWA7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use