Abstract
Most laser diodes are fabricated on p-doped substrates with n-doped material below the active region and p-doped material above it. Most laser diodes are fabricated on p-doped substrates with n-doped material below the active region and p-doped material above it. However, both circuit and device performance considerations motivate inverting this polarity so that the substrate and lower epitaxial layers are p-doped and the upper epitaxial layers are «-doped, From a circuit perspective, this latter configuration allows simple fabrication of laser arrays with the substrate as a common anode that can be driven with open collector npn transistors.
© 1997 Optical Society of America
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