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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper JWA4

Ultrafast electron redistribution in intrinsic GaAs

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Abstract

The study of the redistribution of nonequilibrium carrier populations in semiconductors is considerably complicated by the fact that most experiments measure a combination of electron and hole dynamics and the signals in ultrashort-pulse experiments contain coherence effects and are not solely population dependent.

© 1997 Optical Society of America

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