Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epltaxy

Li Qian; S. D. Benjamin; P. W. E. Smith; B. J. Robinson; D. A. Thompson

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper JWA8

Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epltaxy

Li Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, and D. A. Thompson

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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Joint Session on Ultrafast Dynamics (JWA)

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L. Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, and D. A. Thompson, "Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epltaxy," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper JWA8.

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Abstract

Ultrafast optical response and large optical nonlinearity are the two basic requirements for materials used in ultrafast all-optical devices.

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