200mW 192nm Generation using CsLiB6O10 Crystal

K. Deki; J. Sakuma; Y. Ohsako; N. Kitatochi; T. Yokota; M. Horiguchi; Y. Mori; T. Sasak

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CPD4

200mW 192nm Generation using CsLiB₆O₁₀ Crystal

K. Deki, J. Sakuma, Y. Ohsako, N. Kitatochi, T. Yokota, M. Horiguchi, Y. Mori, and T. Sasak

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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K. Deki, J. Sakuma, Y. Ohsako, N. Kitatochi, T. Yokota, M. Horiguchi, Y. Mori, and T. Sasak, "200mW 192nm Generation using CsLiB6O10 Crystal," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CPD4.

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Abstract

More than 200mW average power at 192nm was obtained at repetition frequency of 100Hz using CLBO as the final sum ferequency mixing crystal.

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