On the optical response of modulation doped field-effect phototransistors

M.A. Romero; L.E.M. de Barros; L.E.M. de Barros; P.R. Herczfeld; P.R. Herczfeld

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CTuA4

On the optical response of modulation doped field-effect phototransistors

M.A. Romero, L.E.M. de Barros, and P.R. Herczfeld

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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IR Sensors & Systems (CTuA)

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M. A. Romero, L. E. M. de Barros, and P. R. Herczfeld, "On the optical response of modulation doped field-effect phototransistors," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CTuA4.

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Abstract

The effects of illumination of modulation- doped field-effect transistors (MODFETs) and related structures have been subject to several investigations^1-3 aiming to combine photodetection and amplification in a single monolithic phototransistor, potentially simplifying the optical receiver configuration.

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