Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride

L.-H. Peng; C.-W. Chuang; Y.-C. Hsu; J.-K. Ho; J.-K. Ho; C.-N. Huang; C.-N. Huang; C.-Y. Chen; C.-Y. Chen

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CTuM33

Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride

L.-H. Peng, C.-W. Chuang, Y.-C. Hsu, J.-K. Ho, C.-N. Huang, and C.-Y. Chen

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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CLEO Poster Session: I (CTuM)

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L. -. Peng, C. -. Chuang, Y. -. Hsu, J. -. Ho, C. -. Huang, and C. -. Chen, "Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CTuM33.

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Abstract

Etching of III-V nitrides has become an important processing technique for realizing short- wavelength emitters, detectors, and high-temperature electronic devices.

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