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Conferences > CLEO > 1998 > CWD > CWD2
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWD2

Characterization of InGaN/GaN lasing structures for high temperature device applications

S. Bidnyk, Y.H. Cho, T.J. Schmidt, J.J. Song, S. Keller, U.K. Mishra, and S.P. DenBaars

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Abstract

The low temperature sensitivity of the lasing threshold in InGaN multi-quantum well (MQW) laser diode structures near room temperature (RT), 1 in comparison with structures based on other III-V2 and II-VI3 materials, merits further research to explore possibilities for development of InGaN MQW laser diodes that can operate at hundreds of degrees above RT.

© 1998 Optical Society of America

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