Characterization of InGaN/GaN lasing structures for high temperature device applications

S. Bidnyk; Y.H. Cho; T.J. Schmidt; J.J. Song; S. Keller; S. Keller; U.K. Mishra; U.K. Mishra; S.P. DenBaars; S.P. DenBaars

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CWD2

Characterization of InGaN/GaN lasing structures for high temperature device applications

S. Bidnyk, Y.H. Cho, T.J. Schmidt, J.J. Song, S. Keller, U.K. Mishra, and S.P. DenBaars

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Visible Lasers: I (CWD)

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S. Bidnyk, Y. H. Cho, T. J. Schmidt, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, "Characterization of InGaN/GaN lasing structures for high temperature device applications," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CWD2.

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Abstract

The low temperature sensitivity of the lasing threshold in InGaN multi-quantum well (MQW) laser diode structures near room temperature (RT), ¹ in comparison with structures based on other III-V² and II-VI³ materials, merits further research to explore possibilities for development of InGaN MQW laser diodes that can operate at hundreds of degrees above RT.

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