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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWD2

Characterization of InGaN/GaN lasing structures for high temperature device applications

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The low temperature sensitivity of the lasing threshold in InGaN multi-quantum well (MQW) laser diode structures near room temperature (RT), 1 in comparison with structures based on other III-V2 and II-VI3 materials, merits further research to explore possibilities for development of InGaN MQW laser diodes that can operate at hundreds of degrees above RT.

© 1998 Optical Society of America

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