Gain characteristics of InGaN/GaN quantum well diode lasers

Y.-K. Song; M. Kuball; A.V. Nurmikko; G. E. Bulman; G. E. Bulman; K. Doverspike; K. Doverspike; S.T. Sheppard; S.T. Sheppard; T.W. Weeks; T.W. Weeks; M. Leonard; M. Leonard; H. S. Kong; H. S. Kong; H. Dieringer; H. Dieringer; J. Edmond; J. Edmond

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CWD3

Gain characteristics of InGaN/GaN quantum well diode lasers

Y.-K. Song, M. Kuball, A.V. Nurmikko, G. E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, M. Leonard, H. S. Kong, H. Dieringer, and J. Edmond

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Visible Lasers: I (CWD)

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Y. -. Song, M. Kuball, A. V. Nurmikko, G. E. Bulman, K. Doverspike, S. T. Sheppard, T. W. Weeks, M. Leonard, H. S. Kong, H. Dieringer, and J. Edmond, "Gain characteristics of InGaN/GaN quantum well diode lasers," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CWD3.

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Abstract

In spite of advances that have led to the demonstration of a 1000-hour cw blue InGaN quantum well (QW) diode laser, ¹ as well the demonstration of cw laser operation on a SiC substrate, ² major unanswered questions exist about the physics of optical gain in this disordered QW system, given the demonstrably large departure of InGaN from a random alloy in terms of microscopic scale In-concentration fluctuations (x_In).

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