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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWD3

Gain characteristics of InGaN/GaN quantum well diode lasers

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Abstract

In spite of advances that have led to the demonstration of a 1000-hour cw blue InGaN quantum well (QW) diode laser, 1 as well the demonstration of cw laser operation on a SiC substrate, 2 major unanswered questions exist about the physics of optical gain in this disordered QW system, given the demonstrably large departure of InGaN from a random alloy in terms of microscopic scale In-concentration fluctuations (xIn).

© 1998 Optical Society of America

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