Spectral response of THz detectors made on LT-GaAs grown at different temperatures

Hajime Abe; Masahiko Tani; Kiyomi Sakai; Shin-ichi Nakashima; Shin-ichi Nakashima

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CWF54

Spectral response of THz detectors made on LT-GaAs grown at different temperatures

Hajime Abe, Masahiko Tani, Kiyomi Sakai, and Shin-ichi Nakashima

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Poster Session: II (CWF)

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H. Abe, M. Tani, K. Sakai, and S. Nakashima, "Spectral response of THz detectors made on LT-GaAs grown at different temperatures," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CWF54.

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Abstract

The low-temperature-grown GaAs (LT-GaAs) is a promising material for ultrafast optoelectronic devices.

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