Effect of a deep-level trap on hole transport in InAlAs/InGaAs metal-semiconductor-metal photodetectors

K. J. Lee; F. G. Johnson; Junghwan Kim; W. B. Johnson; Chi H. Lee

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CWH3

Effect of a deep-level trap on hole transport in InAlAs/InGaAs metal-semiconductor-metal photodetectors

K. J. Lee, F. G. Johnson, Junghwan Kim, W. B. Johnson, and Chi H. Lee

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Compound Semiconductors (CWH)

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K. J. Lee, F. G. Johnson, J. Kim, W. B. Johnson, and C. H. Lee, "Effect of a deep-level trap on hole transport in InAlAs/InGaAs metal-semiconductor-metal photodetectors," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CWH3.

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Abstract

InGaAs metal-semiconductor-metal (MSM) photodetectors with interdigital electrodes are promising for applications in high-speed fiber-optic and atmospheric communications.

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