Electron time-of-flight measurements in quantum well lasers

S.A. Wood; D. J. Somerford; P. M. Smowton; C. C. Button; P. Blood

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CWJ6

Electron time-of-flight measurements in quantum well lasers

S.A. Wood, D. J. Somerford, P. M. Smowton, C. C. Button, and P. Blood

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Visible Lasers: II (CWJ)

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S. A. Wood, D. J. Somerford, P. M. Smowton, C. C. Button, and P. Blood, "Electron time-of-flight measurements in quantum well lasers," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CWJ6.

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Abstract

The large temperature dependence of the threshold current observed in AlGaInP quantum well lasers is primarily due to thermally activated leakage current.¹

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