Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWL1

High-temperature (210°C) operation of long-wavelength strained quantum well lasers on InGaAs ternary substrates

Not Accessible

Your library or personal account may give you access

Abstract

The 1.3-μm semiconductor lasers of excellent temperature characteristics are strongly required for future optical interconnection and optical access systems.

© 1998 Optical Society of America

PDF Article
More Like This
Present and prospects of high T0 long-wavelength lasers on InGaAs ternary substrate

Hiroshi Ishikawa
CWL3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

1.3-μm AIGalnAs/InP strained multiple quantum well lasers for high-temperature operation

T. Ishikawa, T. Higashi, T. Uchida, T. Yamamoto, T. Fujii, H. Shoji, and M. Kobayashi
CWL4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

High-temperature operation of 1.3-μm AlGaInAs/InP strained multiple quantum well lasers with an AlInAs electron stopper layer

Tsutomu Munakata, Keizo Takemasa, Masao Kabayashi, and Hiroshi Wada
CWL2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.