1.3-μm AIGalnAs/InP strained multiple quantum well lasers for high-temperature operation

T. Ishikawa; T. Higashi; T. Uchida; T. Yamamoto; T. Fujii; H. Shoji; M. Kobayashi

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CWL4

1.3-μm AIGalnAs/InP strained multiple quantum well lasers for high-temperature operation

T. Ishikawa, T. Higashi, T. Uchida, T. Yamamoto, T. Fujii, H. Shoji, and M. Kobayashi

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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High Operational Temperate DFB Laser (CWL)

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T. Ishikawa, T. Higashi, T. Uchida, T. Yamamoto, T. Fujii, H. Shoji, and M. Kobayashi, "1.3-μm AIGalnAs/InP strained multiple quantum well lasers for high-temperature operation," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CWL4.

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Abstract

High-temperature operation of 1.3-μm semiconductor lasers is strongly required for optical subscriber systems.

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