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Conferences > CLEO > 1998 > CWN > CWN2
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWN2

Optimization of p-doping profile of 1.3-μm InGaAsP/lnP MQW lasers for high-temperature operation

D.V. Donetsky, C.L. Reynolds, G.L. Belenky, G.E. Shtengel, R.F. Kazarinov, and S. Luryi

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Abstract

It was shown theoretically and experimentally that an increase of p-doping concentration in the vicinity of a separate confinement heterostructure (SCH) of 1.3-μm multiple quantum well (MQW) InGaAsP/lnP lasers leads to improvement of the device temperature performance.1,2

© 1998 Optical Society of America

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