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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWP1

Influence of p-doping and waveguide composition on the lasing properties of 630-nm band AIGalnP laser diodes

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Abstract

The problems of small band discontinuities and proper p-doping in the material system (AlyGa(1−T))xIn(1−x)P are often discussed with respect to achieving high barriers for a reduction of thermal carrier leakage into the cladding layers.1

© 1998 Optical Society of America

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